Q&A

G According to the hydrogen model, the donor ionization energy (binding energy) in Si is 0.05 eV. Consider another semiconductor

g According to the hydrogen model, the donor ionization energy (binding energy) in Si is 0.05 eV. Consider another semiconductor (X) with an electron effective mass (meX ∗ ) 10 times smaller and a relative dielectric constant (rX) 10% greater than those (meSi ∗ , rSi) of Si, respectively. What is the donor ionization energy of this semiconductor?

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